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GaN RF Power Amplifier Module 4000‑4900MHz 80W CW High Gain Power Amp Module Built‑in Signal Source 28V DC for RF System Integration

GaN RF Power Amplifier Module 4000‑4900MHz 80W CW High Gain Power Amp Module Built‑in Signal Source 28V DC for RF System Integration
Basic Properties
Country Of Origin
GUANGDONG-China
Brand Name
LDSK-TZ
PRODUCT MODEL
TZ-GaN
Trading Properties
MOQ
1
Unit Price
$290
Payment Method
T/T,D/P,D/A
Product Summary

This 4000‑4900MHz GaN RF power amp delivers 80W CW output at 45% typical efficiency. It has built‑in signal source, 28V DC input and N‑female connector. Compact 330g unit offers high gain, low in‑band fluctuation, stable thermal performance for RF system integration.

Product Details
Highlight:

GaN RF Power Amplifier Module

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4000-4900MHz 80W CW Power Amp

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28V DC RF System Integration Module

Maximum Output Power: 49±0.5dBm
Working Voltage: 28 V
Size: 133.8*51.3*22.5MM
Frequency Range: 4000-4900MHz
RF Output Connector: N
High And Low Temperature Test: -40~+55 ℃ (working Environment Temperature)
Output Port  VSWR: ≤1.30
Weight: 330 G
Working Efficiency: 45%
Product Description
Product Overview

This GaN RF power amplifier module delivers 80 W continuous-wave output across the 4000–4900 MHz band with a built-in signal source. Operating from a 28 V DC supply (24–32 V range), it is engineered for stable, high-gain performance in demanding RF system integration projects.

Technical Specifications
Test Item Indicator Unit Remarks
Frequency Range 4000–4900 MHz With built-in signal source
Operating Voltage 28 V 24–32 V
Maximum Output Power 49 ± 0.5 dBm 80 W @ ≤ 7.5 A
Working Efficiency 45 % Typical working efficiency
Output Port VSWR ≤ 1.30 — —
In-band Fluctuation ≤ 2 dB Peak-to-peak
Operating Ambient Temperature -10 to +55 ℃ Capable of starting at low temperature
Gain Stability ± 1.5 @ -40℃ to +55℃ dB —
Power Stability ± 1.5 @ -40℃ to +55℃ dB —
Power Supply Requirement ≥ 9 A @ +28 V DC — 80 W continuous wave output
Power Supply Interface — — Red for positive/B+, black for negative/B-
Power Amplifier Enable — — White wire: turn on at high level, turn off at low level
RF Output Connector N — N outer threaded female connector
Dimensions 133.8 × 51.3 × 22.5 mm Excluding N connector
Mounting Hole 129.1 × 46.1 mm M3.0 × 10
Weight 330 g —
Product Images
Application Scenario
GaN RF power amplifier module deployed in an anti-drone RF system integration scenario
About Our Company
Frequently Asked Questions
Q1: Are you a factory or a trading company?

We are a manufacturer based in Shenzhen, China. You are warmly welcome to visit our facility.

Q2: Why choose us?
  • Solid industry experience: 5 years specializing in anti-drone solutions, serving over 1,000 clients.
  • Fast support: Most issues settled within 3 working days.
  • One-stop customized solutions: From individual modules to complete systems.
Q3: What products do you offer?

Anti-drone modules, full anti-drone systems, drone detectors, and related accessories.

Q4: What is your order process?

Inquiry & confirmation → Payment → Production → Shipment.

Q5: What is your lead time?

In-stock items can be shipped right away. Custom production normally takes 7–10 business days.

Q6: How can I get in touch with you?

You may submit your contact details (email, WhatsApp, WeChat, etc.) via our website, and we will get back to you promptly.