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Anti Drone Module
Created with Pixso. Ladasky 100W 50dBm GaN Power Amplifier 100-1020MHz RF Amplifier Module with Built-in Signal Source for Counter Drone Systems

Ladasky 100W 50dBm GaN Power Amplifier 100-1020MHz RF Amplifier Module with Built-in Signal Source for Counter Drone Systems

Brand Name: LDSK
MOQ: 1 piece
Delivery Time: 1-3 workdays
Detail Information
Place of Origin:
Guangdong, China
Frequency Range:
100-400 200-400 300-600 400-700 700-1020
Working Voltage:
24-32V
Maximum Output Power:
50dBm
Power Amplifier Efficiency:
50%
Maximum Gain:
45dB
Working Environment Temperature:
-40~+55
Power Stability:
±1.5dB
Output Port VSWR:
≤2
Power Supply Requirements:
≥9A
Enable:
White Wire: Turn On At High Level, Turn Off At Low Level
Supply Ability:
5000pcs per month
Product Description
Detail Information
Place of Origin:
China
Certification:
Guangdong, China
Detecting Frequency:
100-400/200-400/400-700/700-1020MHz 100W
Packaging Details:
Box
Supply Ability:
50000 pcs per month
Product Description

LDK-TZ- 100W GaN Wideband RF Power Amplifier Module (100-400/200-400/400-700/700-1020MHz)

Product Specifications

TZ‑KGAN‑100W is a compact metal‑enclosed GaN RF power amplifier built for industrial system integration. It delivers 100W output across 100‑1020 MHz, with 50% typical working efficiency and ±1.5 dB power variation within wide temperature scope. Two physical options are selectable: standard unit and unit pre‑fitted with isolator with separate dimension and weight parameters. It adopts bottom‑based thermal dissipation and needs forced‑air cooling or conductive heat sink for stable performance. The module supports high/low‑level enable trigger for remote hardware control. It is fastened with M3 screws for easy chassis installation. All test data is collected at 25℃ ambient condition, custom mechanical and interface options can be discussed.

Technical Specifications
Item Specification Remarks
Product Model LDK‑TZ‑KGAN‑100W
Operational Frequency 100‑1020 MHz Multiple sub‑ranges covered, built‑in high‑efficiency signal source
Rated Max Output 100W (50 dBm) Current consumption ≤7.8A at max power
Maximum Gain 45 dB
Typical Amplifier Efficiency 50%
DC Input Voltage 24‑32 V Recommended typical working voltage: 28 V
Power Supply Capacity ≥9 A Required for continuous‑wave full‑power output
Working Ambient Temperature -40℃ ~ +55℃
Output Power Deviation ±1.5 dB Measured within ‑20℃ ~ +75℃
Output VSWR ≤2
RF Output Interface N‑Female Custom connectors are acceptable
Enable Signal White wire pin High‑level for power‑on, low‑level for power‑off
Size‑Standard Version 156.564.724.5 mm Dimension excludes N‑Female connector
Size‑Version with Isolator 187.164.724.5 mm Dimension excludes N‑Female connector
Unit Weight 471g / 500g Standard / Isolator‑fitted version
Thermal Solution Base heat dissipation Requires forced‑air cooling or conductive heat sink
Mounting Fastener M3.0 steel screws

Ladasky 100W 50dBm GaN Power Amplifier 100-1020MHz RF Amplifier Module with Built-in Signal Source for Counter Drone SystemsLadasky 100W 50dBm GaN Power Amplifier 100-1020MHz RF Amplifier Module with Built-in Signal Source for Counter Drone SystemsLadasky 100W 50dBm GaN Power Amplifier 100-1020MHz RF Amplifier Module with Built-in Signal Source for Counter Drone SystemsLadasky 100W 50dBm GaN Power Amplifier 100-1020MHz RF Amplifier Module with Built-in Signal Source for Counter Drone SystemsLadasky 100W 50dBm GaN Power Amplifier 100-1020MHz RF Amplifier Module with Built-in Signal Source for Counter Drone SystemsLadasky 100W 50dBm GaN Power Amplifier 100-1020MHz RF Amplifier Module with Built-in Signal Source for Counter Drone SystemsLadasky 100W 50dBm GaN Power Amplifier 100-1020MHz RF Amplifier Module with Built-in Signal Source for Counter Drone Systems

Key Highlights:

  • Delivers up to 100W continuous RF output power, providing strong amplification capability for high-performance RF systems.
  • Based on GaN semiconductor technology, featuring high efficiency, high temperature tolerance, and excellent voltage resistance for stable operation.
  • Supports wide frequency coverage from 100MHz to 1020MHz, with multiple frequency options for flexible system integration.
  • Built-in high-efficiency signal source design reduces external equipment requirements and simplifies system deployment.
  • Provides high linearity and low distortion output to ensure reliable RF signal performance in demanding applications.
  • Ladasky 100W 50dBm GaN Power Amplifier 100-1020MHz RF Amplifier Module with Built-in Signal Source for Counter Drone SystemsLadasky 100W 50dBm GaN Power Amplifier 100-1020MHz RF Amplifier Module with Built-in Signal Source for Counter Drone SystemsLadasky 100W 50dBm GaN Power Amplifier 100-1020MHz RF Amplifier Module with Built-in Signal Source for Counter Drone SystemsLadasky 100W 50dBm GaN Power Amplifier 100-1020MHz RF Amplifier Module with Built-in Signal Source for Counter Drone SystemsLadasky 100W 50dBm GaN Power Amplifier 100-1020MHz RF Amplifier Module with Built-in Signal Source for Counter Drone Systems