Product Description Specification Item name Technical parameters Working frequency 1160-1300MHz Saturated output power 471dBm @input=3~5dbm Gain 452dB In-band fluctuation 2.0dB Out-of-band spurious 9kHz1GHz:-36dBm/30kHz 1GHz12.75GHz:-30dBm/30KHz Input VSWR/Out VSWR 2 Gain temperature stability 1.5dB Working voltage DC+32V Temperature Protection(Warn) Temperature protection 90 degrees(see PIN8) VSWR Protection(Warn) Reverse Power 15W protection Working current 4A

Product Description Specification Place of OriginChina GuangdongBrand NameTTSKModule name433mhz 50W moduleFrequency433MhzSupply VoltageDC 24-28VPower50W(47dbm)Input/Output VSWR1.5dBSize125*60*20mmWeight136 gOperating Temperature-20-80RF ConnectorSMA Packing & Delivery Each one is packed in bubble bag and put into carton Company Profile Who we are: Established in Shenzhen in 2014, with branch office in High-tech Zone, Xi'an City, Shaanxi Province, and the production workshop

Product Description Specification Frequency 2400-2500mhz Power supply 100W Saturated output power 501dBm @input=5dbm Gain 502dB In-band fluctuation 2.0dB Out-of-band spurious 9kHz1GHz:-36dBm/30kHz 1GHz12.75GHz:-30dBm/30KHz Input VSWR/Out VSWR 2 Gain temperature stability 1.5dB Working voltage DC+32V Protection Temperature protection 90 degrees,Reverse Power 30W protection Working current 8.5A Power supply monitoring interface Power supply: 7W2 power seat A1:32V A2

Product Description Lead time Quantity(PCS)

Product Description Specification Frequency 2280-2600mhz Power supply 100W Saturated output power 501dBm @input=5dbm Working voltage DC:28-32V Protection Temperature protection 90 degrees,Reverse Power 30W protection Working current 8.5A Power supply monitoring interface Power supply: Perform capacitive Pin1:GNDPin2:GND Pin3: 28V Pin4: 28V Pin5: 28VPin6: 28V Pin7: GND Pin8: GND Pin9:Power indication(0-3.3V,Power detection voltage)Pin10:VSWR protection(0-3.3V,Alarm

700-6000MHz 80W GaN RF Power Amplifier Module Key Features: 700-6000MHz RF Module Power Amplifier 80W RF Module Power Amplifier GaN technology for high efficiency and output Operates in temperatures from -10C to +55C Technical Specifications Working Frequency 700-6000MHz Power 80W Supply Voltage DC 24-32V Max Output Power 50 dBm Working Efficiency 50% Passband Ripple 2dB Weight 900g Operating Temperature -10~+55C Power Supply Requirements 10A RF Connector N output, SMA

100W Compact GaN RF Power Amplifier Module Wireless Communication for FPV Interference Key Features The LDK-TZ-KGN-100W High Power GaN RF Power Amplifier Module delivers: Advanced Gallium Nitride (GaN) technology 100W continuous output power at 2500-4000MHz High efficiency and stable gain performance Robust metal housing with optimized thermal management Comprehensive protection features (over-temperature, VSWR) RS-485 and TTL communication protocols for system integration

Key Word Place of Origin Guangdong, China Brand Name LDSK Place of Origin Guangdong, China Product name RF power amplifier module(GaN) Frequency 720-1020MHz Out power 30W Frequency and Power Customization Support Max Gain 45 dBm Voltage 24-32V Product Size 29.7*131*15.5mm Product Weight 136 g Lead time Quantity(PCS)

5.8GHz 10W RF Power Amplifier Module for Drone Detection Product Attributes Attribute Value Trademark LDSK Customization Frequency, power and logo Product 5.8Ghz 10W Technical Specifications Brand Name LDSK Product Name RF power amplifier module (GaN) Frequency Range 5725-5850MHz / 5720-5880MHz / 5.8G Output Power 10W Customization Support Frequency and Power Maximum Gain 43+0.5 dBm Operating Voltage 24-32V Dimensions 29.7 131 15.5mm Weight 136g Product Description High