700-6000MHz 80W Wideband RF Amplifier Module GaN High Power Amplifier with RS485 Monitoring
700-6000MHz 80W Wideband RF Amplifier Module GaN High Power Amplifier with RS485 Monitoring Product Specifications The module is an 80W wideband RF power amplifier module engineered for professional RF system integration and signal amplification applications. Covering frequencies from 700 MHz to ...
The module is an 80W wideband RF power amplifier module engineered for professional RF system integration and signal amplification applications.
Covering frequencies from 700 MHz to 6000 MHz, this module provides broad frequency compatibility in a single compact design. Its GaN-based architecture delivers high power output, excellent temperature tolerance, and high voltage resistance.
For enhanced system management, the amplifier incorporates an RS485 communication interface that supports monitoring of key operating parameters, including temperature, current, voltage, frequency, and RF output power.
With a maximum gain of 45 dB, gain flatness of ≤5 dB, and a robust metal enclosure, the TTSK-TZ-GAN-10 offers a practical solution for equipment manufacturers and engineering teams seeking reliable RF amplification modules.
TATUSKY also supports discussions on customized frequency ranges and connector configurations to meet different integration requirements.
Key Features
1. Broad Frequency Compatibility
The 700–6000 MHz operating frequency range provides wide frequency coverage, reducing the need for multiple separate amplifier modules in compatible system designs.
2. Powerful 80W RF Output
Provides up to 80W output power with a maximum gain of 45 dB, suitable for high-power RF amplification requirements.
3. High-Performance GaN Design
GaN semiconductor technology offers high power density, high temperature tolerance, and high voltage resistance.
4. Integrated RS485 Communication
The communication interface supports monitoring of five key parameters:
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Temperature
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Current
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Voltage
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Operating frequency
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RF output power
5. Designed for Stable Operation
Gain flatness is ≤5 dB, with specified power stability of ±1.0 dB under the stated temperature test conditions.
6. Industrial Metal Housing
The compact metal module features a bottom-mounted heat sink and screw-fixed mounting structure for convenient equipment integration.
7. Flexible Thermal Management
Supports forced air cooling or conductive heat dissipation according to the equipment installation design.
8. Customization Support
Custom frequency ranges and special connector requirements can be discussed with the TATUSKY engineering and sales teams.
Technical Specifications
Technical Item Specification
Product Model LDK-TZ-GAN-80W
Product Type GaN RF Power Amplifier
Frequency Coverage 700–6000 MHz
Output Power 80 W
Operating Voltage 28–32 V DC
Typical Voltage 32 V
Power Supply Requirement ≥12 A @ +32 V DC
Typical Current 9.2 A @ 80 W
Efficiency 27% @ 80 W
Maximum Power Gain 45 dB
Gain Flatness ≤5 dB
Standard Input Power 7 dBm
Maximum Undamaged Input Power ≤10 dBm
Input VSWR ≤2
Operating Temperature -10°C to +55°C
Power Stability ±1.0 dB @ -40°C to +55°C
Control Interface RS485
Monitoring Functions Temperature, Current, Voltage, Frequency, RF Output Power
Power Interface Feedthrough Capacitor
Input Connector SMB-JE
Output Connector N Female
Housing Material Metal
Cooling Structure Bottom-Mounted Heat Sink
Cooling Options Forced Air / Conductive Cooling
Installation Screw-Fixed
Product Dimensions 170 × 77 × 24.5 mm
Product Weight 750 g
Mounting Hole Spacing 152.3 × 71.5 mm
Mounting Holes 4 × M3
Technical note: Parameters are measured at an ambient temperature of 25°C unless otherwise specified. Dimensions exclude connectors.
| Quantity (PCS) | Lead Time (Days) |
|---|---|
| <100pcs | 15 |
| <500pcs | 20 |
| 500-1000pcs | 30 |
| >1000pcs | To be negotiated |
Q1: How do I choose the right RF power amplifier?
A: You should consider the required frequency range, output power, gain, operating voltage, cooling conditions, and interface requirements. Our team can help you select a suitable model based on your technical specifications.
Q2: What is the difference between GaN and traditional RF amplifier technology?
A: GaN technology offers advantages in power density, temperature tolerance, and voltage resistance, making it suitable for many high-power RF applications.
Q3: Can one amplifier cover multiple frequency bands?
A: Yes. Wideband amplifiers can support multiple frequencies within their specified operating range. This model covers 700–6000 MHz.
Q4: Does LADASKY offer customized RF amplifier modules?
A: Yes. We can discuss customized frequency ranges, connectors, and other technical requirements based on project feasibility.
Q5: What information should I provide when requesting a quotation?
A: Please share your required frequency range, output power, operating voltage, quantity, connector requirements, and intended application.
Q6: What is the minimum order quantity?
A: MOQ depends on the specific model and customization requirements. Please contact our sales team for details.
Q7: How long is the delivery time?
A: Delivery time depends on order quantity, product availability, and customization requirements. Please contact us for an estimated lead time.
Q8: Does LADASKY provide product testing before shipment?
A: Yes. Product testing and quality inspection can be arranged according to the product configuration and order requirements.
Q9: Can I get technical documentation before purchasing?
A: Yes. We can provide available technical specifications and product documentation to help you evaluate the module.
Q10: Why choose LADASKY as your RF amplifier supplier?
A: LDDASKY focuses on RF product development and manufacturing, providing technical support, customization services, and product solutions for global customers.
